Methods for forming a laminate film by cyclical plasma-enhanced deposition processes

ABSTRACT

Methods for forming a laminate film on substrate by a plasma-enhanced cyclical deposition process are provided. The methods may include: providing a substrate into a reaction chamber, and depositing on substrate a metal oxide laminate film by alternatingly depositing a first metal oxide film and a second metal oxide film different from the first metal oxide film, wherein depositing the first metal oxide film and the second metal oxide film comprises, contacting the substrate with sequential and alternating pulses of a metal precursor and an oxygen reactive species generated by applying RF power to a reactant gas comprising at least nitrous oxide (N 2 O).

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims priority to U.S. Application No. 63/067,287, filed on Aug. 18, 2020 in the United States Patent and Trademark Office, the disclosure of which is incorporated herein in its entirety by reference.

FIELD OF INVENTION

The present disclosure generally relates to methods for forming a laminate film and particular methods for forming a laminate film composed of two or more metal oxide films of differing composition by cyclical plasma-enhanced deposition processes, such as, for example, plasma-enhanced atomic layer deposition (PEALD) processes, and cyclical plasma-enhanced chemical vapor deposition (PECVD) processes.

BACKGROUND OF THE DISCLOSURE

Cyclical plasma-enhanced deposition processes, sometimes referred to as cyclical plasma-assisted deposition processes, may be utilized to improve the reaction energy of a deposition process without increasing the deposition temperature. For example, in a first deposition phase a precursor may adsorb on a substrate to approximately a monolayer or less, and in a second deposition phase the substrate may be exposed to reactive species generated from a plasma.

Laminate films composed of two or more films with different compositions may have a number of applications in the fabrication of semiconductor device structures. Accordingly, methods for forming laminate films by cyclical plasma-enhanced deposition processes are highly desirable.

Any discussion, including discussion of problems and solutions, set forth in this section has been included in this disclosure solely for the purpose of providing a context for the present disclosure. Such discussion should not be taken as an admission that any or all of the information was known at the time the invention was made or otherwise constitutes prior art.

SUMMARY OF THE DISCLOSURE

In accordance with at least one embodiment of the disclosure, a method for forming a laminate film is provided. The method may comprise: providing a substrate into a reaction chamber configured for cyclical plasma-enhanced deposition processes; heating the substrate to a desired deposition temperature; depositing on the substrate a laminate film by alternatingly depositing a zirconium oxide film and a titanium oxide film; wherein depositing the laminate film comprises: contacting the substrate with sequential and alternating pulses of an amino-based metal precursor and an oxygen reactive species generated from a plasma produced from a reactant gas comprising at least nitrous oxide (N₂O).

The embodiments of the disclosure also include additional methods for forming a laminate film on a substrate disposed within a reaction chamber. The methods may comprise: performing one or more deposition super-cycles of a cyclical plasma-enhanced deposition process, wherein a unit deposition super-cycle comprises: depositing a zirconium oxide film by contacting the substrate with sequential and alternating pulses of an amino-based zirconium precursor and a first oxygen reactive species; and depositing a titanium oxide film by contacting the substrate with sequential and alternating pulses of an amino-based titanium precursor and a second oxygen reactive species.

The embodiments of the disclosure may also include further methods for forming a laminate film comprising: providing a substrate into a reaction chamber; depositing on the substrate a metal oxide laminate film by alternatingly depositing a first metal oxide film and a second metal oxide film different from the first metal oxide film, wherein depositing the first metal oxide film and the second metal oxide films comprises: contacting the substrate with sequential and alternating pulses of a metal precursor and an oxygen reactive species generated by applying RF power to a reactant gas comprising at least nitrous oxide (N₂O).

For the purpose of summarizing the invention and the advantages achieved over the prior art, certain objects and advantages of the invention have been described herein above. Of course, it is to be understood that not necessarily all such objects or advantages may be achieved in accordance with any particular embodiment of the invention. Thus, for example, those skilled in the art will recognize that the invention may be embodied or carried out in a manner that achieves or optimizes one advantage or group of advantages as taught or suggested herein without necessarily achieving other objects or advantages as may be taught or suggested herein.

All of these embodiments are intended to be within the scope of the invention herein disclosed. These and other embodiments will become readily apparent to those skilled in the art from the following detailed description of certain embodiments having reference to the attached figures, the invention not being limited to any particular embodiment(s) disclosed.

BRIEF DESCRIPTION OF THE DRAWING FIGURES

While the specification concludes with claims particularly pointing out and distinctly claiming what are regarded as embodiments of the invention, the advantages of embodiments of the disclosure may be more readily ascertained from the description of certain examples of the embodiments of the disclosure when read in conjunction with the accompanying drawing, in which:

FIG. 1 illustrates a simplified schematic diagram of an exemplary deposition apparatus which may be utilized to perform the cyclical plasma-enhanced deposition processes of the current disclosure;

FIG. 2 illustrates an exemplary process flow for forming a laminate film by a cyclical plasma-enhanced deposition processes in accordance with the embodiments of the disclosure;

FIG. 3 illustrates an exemplary first sub-cycle for depositing a first metal oxide film according to the embodiments of the disclosure;

FIG. 4 illustrates an exemplary second sub-cycle for depositing a second metal oxide film according to the embodiments of the disclosure;

FIG. 5 illustrates an exemplary deposition super-cycle of a plasma-enhanced cyclical deposition process for forming a laminate film according to the embodiments of the disclosure;

FIGS. 6A and 6B illustrate simplified cross-section diagrams of semiconductor structures including a metal oxide lamination formed according to the embodiments of the disclosure; and

FIG. 7 illustrates experimental data demonstrating the etch resistance of zirconium dioxide (ZrO₂) films in comparison with ZrO₂/TiO₂ metal oxide laminate films deposited according to the embodiments of the disclosure.

It will be appreciated that elements in the figures are illustrated for simplicity and clarity and have not necessarily been drawn to scale. For example, the dimensions of some of the elements in the figures may be exaggerated relative to other elements to help improve understanding of illustrated embodiments of the present disclosure.

DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS

Although certain embodiments and examples are disclosed below, it will be understood by those in the art that the invention extends beyond the specifically disclosed embodiments and/or uses of the invention and obvious modifications and equivalents thereof. Thus, it is intended that the scope of the invention disclosed should not be limited by the particular disclosed embodiments described below.

As used herein, the term “substrate” may refer to any underlying material or materials that may be used, or upon which, a device, a circuit, or a film may be formed.

As used herein, the term “gas” may refer to a vapor, or vaporized solid, and/or liquid, and may be constituted by a single gas or a mixture of gases.

As used herein, the term “reactive species” may refer to one or more species generated by the plasma excitation of a gas and may include, but is it not limited to, ions, radicals, and excited species.

As used herein, the term “film” may refer to any continuous or non-continuous structures and material deposited by the methods disclosed herein. For example, “film” could include 2D materials, nanolaminates, nanorods, nanotubes, or nanoparticles or even partial or full molecular layers or partial or full atomic layers or clusters of atoms and/or molecules. “Film” may comprise material or a layer with pinholes, but still be at least partially continuous.

As used herein, the term “cyclical plasma-enhanced deposition process” may refer to a vapor deposition process in which deposition cycles, particularly a plurality of consecutive repetitions of a unit deposition cycle, wherein a unit deposition cycle includes the use of reactive species generated from a plasma

As used herein, the term “plasma-enhanced atomic layer deposition” (PEALD) may refer to a vapor deposition process in which deposition cycles, preferably a plurality of consecutive unit deposition cycles, are conducted in a reaction chamber. Typically, during each unit deposition cycle a precursor is chemisorbed to a deposition surface (e.g., a substrate surface or a previously deposited underlying surface such as material from a previous PEALD cycle), forming a monolayer or sub-monolayer that does not readily react with additional precursor (i.e., a self-limiting reaction). Thereafter, reactive species generated by a plasma produced from a reactant gas may be introduced into or generated within the reaction chamber for use in converting the chemisorbed precursor to a desired film on the deposition surface. Further, purging steps may also be utilized during each unit deposition cycle to remove excess precursor/reactive species, and any reaction byproducts from the reaction chamber after conversion of the chemisorbed precursor.

As used herein, the term “cyclical plasma-enhanced chemical vapor deposition” (cyclical PECVD) may refer to a vapor deposition process in which deposition cycles, preferably a plurality of consecutive unit deposition cycles, are conducted in a reaction chamber. Typically, during each unit deposition cycle a reactive species may be generated by a plasma through either continuous application of RF power or repeated pulses of RF power. In contrast to PEALD processes, a cyclical PECVD process typically does not employ chemisorption of a vapor phase reactant and subsequent conversion of the chemisorbed molecular layer to the desired material. Cyclical plasma-enhanced chemical vapor deposition may also be referred to as pulsed plasma-enhanced chemical vapor deposition (pulsed PECVD).

As used herein, the term “sub-cycle” may refer to a cyclical plasma-enhanced deposition process comprising a unit deposition cycle which is repeated a predetermined number of times. A combination of two (2) or more sub-cycles may be referred to as a cyclical deposition “super-cycle”.

As used herein, the term “laminate film” may refer to a film comprising two or more films with different compositions alternatingly deposited on a substrate. In some embodiments, the laminate film may comprise separate and distinct films that are discernable by high magnification microscopy imaging techniques. In alternative embodiments, the laminate film may not comprise separate and distinct layers that are discernable by high magnification microscopy imaging techniques.

A number of example materials are given throughout the embodiments of the current disclosure, it should be noted that the chemical formulas given for each of the example materials should not be construed as limiting and that the non-limiting example materials given should not be limited by a given example stoichiometry.

In the specification, it will be understood that the term “on” or “over” may be used to describe a relative location relationship. Another element or layer may be directly on the mentioned layer, or another layer (an intermediate layer) or element may be intervened therebetween, or a layer may be disposed on a mentioned layer but not completely cover a surface of the mentioned layer. Therefore, unless the term “directly” is separately used, the term “on” or “over” will be construed to be a relative concept. Similarly to this, it will be understood the term “under”, “underlying”, or “below” will be construed to be relative concepts.

The cyclical plasma-enhanced deposition processes of the present disclosure may be performed within a reactor and associated reaction chamber(s) arranged and configured for plasma-enhanced atomic layer deposition (PEALD) processes, or cyclical plasma-enhanced chemical vapor deposition (cyclical PECVD) processes, wherein the PECVD apparatus is configured with appropriate hardware for supplying precursors, reactive species, as well as RF power. In some embodiments of the disclosure, a reactor and associated reaction chamber(s) utilized for the formation of a laminate film may be arranged and configured for direct plasma cyclical deposition, or remote plasma cyclical deposition.

In some embodiments, the deposition apparatus may be configured for direct plasma cyclical deposition wherein a capacitively-coupled plasma may be generated by applying radio frequency (RF) power (e.g., at a frequency of 13.56 MHz) between two parallel electrodes in a so-called RF parallel plate, or RF diode reactor. In such embodiments, one electrode may be powered while the second electrode is grounded, and generally, the substrate is positioned on the grounded electrode. A reactant gas may be introduced into the reaction chamber through a powered showerhead (“showerhead-type direct plasma”), or from the side of the electrodes (“flow-type direct plasma”).

In some embodiments, the deposition apparatus may be configured for remote plasma cyclical deposition wherein the plasma source is located remotely from the substrate susceptor such that substrate is not involved in the generation of the reactive species. In such embodiments, the plasma source may be disposed remotely from the reaction chamber and the plasma species may flow from the remote plasma source into the reaction chamber. A variety of plasma sources may be employed for remote plasma cyclical deposition processes, such as, for example, microwave plasmas, electron cyclotron resonance (ECR) plasmas, and RF-driven inductively coupled plasmas (ICP).

The cyclical plasma-enhanced deposition processes of the current disclosure may deposit a laminate film by performing a number of deposition super-cycles comprising of at least a first sub-cycle for the deposition of a first metal oxide film, and a second sub-cycle for the deposition of a second metal oxide film, the second metal oxide film having a different composition from the first metal oxide film. Collectively, the first sub-cycle and the second sub-cycle form a super-cycle utilized for the deposition of the laminate film (e.g., a metal oxide laminate film), wherein a unit deposition super-cycle includes the generation of reactive species from a plasma. As a non-limiting example, the deposition super-cycles may be performed using suitable apparatus such as the exemplary plasma-enhanced deposition apparatus 100 illustrated in FIG. 1.

In more detail, FIG. 1 is a simplified schematic cross-sectional view of an exemplary PEALD apparatus 100 comprising a pair of electrically conductive flat-plate electrodes 104, 102 in parallel and facing each other in the interior 111 (reaction zone) of a reaction chamber 103. RF power (e.g., at a frequency of 13.56 MHz, or 27 MHz) generated from an RF generator 120 may be supplied to the upper electrode 104, whereas the lower electrode 102 may be electrically grounded, thereby exciting a plasma between the two electrodes. A temperature regulator may be provided in the lower electrode 102, and the temperature of a substrate 101 placed on the lower electrode 102 may be regulated at a desired deposition temperature. The upper electrode 104 may also serve as a showerhead gas distributor, and reactant gas and precursor gas may be introduced into the reaction chamber 103 through a gas line 121 and a gas line 122, respectively, and through the showerhead plate 104.

In the reaction chamber 103, a circular duct 113 with an exhaust line 107 may be provided through which gas within the reaction chamber 103 may be exhausted. Additionally, a dilution gas may be introduced into the reaction chamber 103 through a gas line 123. Further, a transfer chamber 105 disposed below the reaction chamber 103 may be provided with a seal gas line 124 to introduce seal gas into the interior 111 of the reaction chamber 103 via the interior 116 (transfer zone) of the transfer chamber 105, wherein a separation plate 114 for separating the reaction zone and the transfer zone is provided (a gate valve through which a wafer is transferred into or from the transfer chamber 105 is omitted from this figure). The transfer chamber 105 may also be provided with an exhaust line 106. In some embodiments, the deposition of laminate films and as well as other possible substrate processes (e.g., surface treatments) may be performed in the same reaction chamber (i.e., reaction space), so that all the steps can continuously be conducted without exposing the substrate to air or other oxygen-containing/contaminating atmospheres. In some embodiments, a remote plasma unit can be used for exciting a gas.

In some embodiments of the disclosure, a cyclical plasma-enhanced deposition process may be utilized to form a laminate film and such processes may include plasma-enhanced atomic layer deposition (PEALD), or cyclical plasma-enhanced chemical vapor deposition (cyclical PECVD). Briefly, a substrate or a workpiece is placed in a reaction chamber and heated to a desired deposition temperature. The laminate film may then be deposited on the substrate by performing a number of deposition super-cycles of a cyclical plasma-enhanced deposition process, wherein the a unit deposition super-cycle may comprise a first sub-cycle for depositing a first metal oxide and a second sub-cycle for depositing a second metal oxide, the second metal oxide being of a different composition to the first metal oxide.

As a non-limiting example, the first metal oxide film may comprise a zirconium oxide film (e.g., ZrO₂) deposited by a first plasma-enhanced cyclical deposition process (the first sub-cycle), and the second metal oxide film may comprise a titanium oxide film (e.g., TiO₂) deposited by a second plasma-enhanced cyclical deposition process (the second sub-cycle).

In some embodiments, both the first and second sub-cycles may comprise plasma-enhanced atomic layer deposition processes utilized to alternatingly deposit metal oxide films with differing compositions. In some embodiments, the metal oxide films are deposited by repetitions of self-limiting PEALD deposition cycles. In some embodiments, each PEALD unit deposition cycle may comprise at least two distinct phases. The provision and removal of a reactant, such as, for example, precursors and/or reactive species, from the reaction chamber may be considered a phase.

In a first phase (“the metal phase”) a metal precursor may be provided into the reaction chamber and contacts the substrate. The metal precursor may chemisorb on the surface of the substrate forming a monolayer or sub-monolayer that does not readily react with additional metal precursor (i.e., a self-limiting reaction). In a second phase (“the plasma phase”), a reactive species generated from a plasma may contact the substrate and react with the chemisorbed metal precursor to deposit the desired film. In some embodiments, the plasma-enhanced cyclical deposition processes of the present disclosure may be utilized to deposit a laminate film comprising two or more metal oxide films having different compositions. In such embodiments, the reactive species generated from the plasma may comprise oxygen reactive species which may be generated from a plasma produced from a reactant gas comprising an oxygen component, such as, nitrous oxide (N₂O), for example.

An exemplary plasma-assisted cyclical deposition process for forming a laminate film according to the embodiments of the disclosure is illustrated with reference to FIG. 2. The exemplary process 200 (FIG. 2) may commence by means of a process block 210 comprising, providing a substrate into a reaction chamber.

In some embodiments of the disclosure, the substrate may comprise a patterned substrate including high aspect ratio features, such as, for example, vertical gap features and/or horizontal gap features. For example, “vertical gap features” may include, but is not limited to: v-shaped vertical trenches, tapered vertical trenches, re-entrant vertical trenches, vertical openings, vertical voids, and vertical through-silicon-via trenches. For example, a vertical gap feature may comprise adjacent sidewalls which meet at a point at the base of the feature, or a vertical gap feature may comprise opposing inclined sidewalls that plateau to a flat base surface. “Vertical” as used herein does not limit the slope of opposing sidewalls specifically to a perpendicular incline with the horizontal plane of the substrate. In addition, the substrate may comprise one or more “horizontal gap features” which may refer to an opening or cavity disposed between two opposing substantially horizontal surfaces, the horizontal surfaces bounding the horizontal opening or cavity.

In some embodiments of the disclosure, the substrate may comprise one or more vertical gap features, wherein the vertical gap features may have an aspect ratio (height:width) which may be greater than 2:1, or greater than 5:1, or greater than 10:1, or greater than 25:1, or greater than 50:1, or even greater than 100:1, wherein “greater than” as used in this example refers to a greater distance in the height of the gap feature.

In some embodiments, a substrate may comprise a plurality of vertical gap features with common and differing aspect ratios. In some embodiments, a substrate may comprise both vertical gap features as well as horizontal gap features.

The substrate may comprise one or more materials and material surfaces including, but not limited to, semiconductor materials, dielectric materials, and metallic materials.

In some embodiments, the substrate may include semiconductor materials, such as, but not limited to, silicon (Si), germanium (Ge), germanium tin (GeSn), silicon germanium (SiGe), silicon germanium tin (SiGeSn), silicon carbide (SiC), or group III-V semiconductor materials.

In some embodiments, the substrate may include metallic materials, such as, but not limited to, pure metals, metal nitrides, metal carbides, metal borides, and mixtures thereof. In some embodiments, the substrate may include dielectric materials, such as, but not limited, to silicon containing dielectric materials and metal oxide dielectric materials.

Patterned substrates may comprise substrates that may include semiconductor device structures formed into or onto a surface of the substrate, for example, a patterned substrate may comprise partially fabricated semiconductor device structures, such as, for example, transistors and/or memory elements. In some embodiments, the substrate may contain monocrystalline surfaces and/or one or more secondary surfaces that may comprise a non-monocrystalline surface, such as a polycrystalline surface and/or an amorphous surface. Monocrystalline surfaces may comprise, for example, one or more of silicon (Si), silicon germanium (SiGe), germanium tin (GeSn), or germanium (Ge). Polycrystalline or amorphous surfaces may include dielectric materials, such as oxides, oxynitrides, oxycarbides, oxycarbide nitrides, nitrides, or mixtures thereof.

Reactors and associated reaction chambers capable of the plasma-enhanced cyclical deposition processes of the current disclosure may include plasma-enhanced atomic layer deposition (PEALD) reactors and appropriately configured PEALD reaction chambers, as well as plasma-enhanced chemical vapor deposition (PEDCVD) reactors and appropriately configured PECVD reaction chambers constructed and arranged to provide the precursors and reactive species. According to some embodiments, a showerhead reactor may be used. According to some embodiments, cross-flow, batch, minibatch, or spatial ALD reactors may be used.

In some embodiments of the disclosure, a batch reactor may be used. In some embodiments, a vertical batch reactor may be used. In other embodiments, a batch reactor comprises a minibatch reactor configured to accommodate 10 or fewer wafers, 8 or fewer wafers, 6 or fewer wafers, 4 or fewer wafers, or 2 or fewer wafers. In some embodiments in which a batch reactor is used, wafer-to-wafer non-uniformity is less than 3% (1 sigma), less than 2%, less than 1%, or even less than 0.5%.

In some embodiments, a high-volume manufacturing-capable single wafer PEALD reactor, or PECVD reactor, may be utilized. In other embodiments, a batch reactor comprising multiple substrates may be utilized. For embodiments in which a batch PEALD reactor is used, the number of substrates may be in the range of 10 to 200, or 50 to 150, or even 100 to 130.

The exemplary cyclical deposition processes as described herein may optionally be carried out in reaction chambers connected to a cluster tool. In a cluster tool, because each reaction chamber is dedicated to one type of process, the temperature of the reaction chamber in each module can be kept constant, which improves the throughput compared to a reaction chamber in which the substrate is heated up to the process temperature before each run. Additionally, in a cluster tool it is possible to reduce the time to pump the reaction chamber to the desired process pressure levels between substrates. In some embodiments of the disclosure, the exemplary plasma-enhanced cyclical deposition processes of the present disclosure may be performed in a cluster tool comprising multiple reaction chambers, wherein each individual reaction chamber may be utilized to expose the substrate to an individual precursor gas and the substrate may be transferred between different reaction chambers for exposure to multiple precursors gases, the transfer of the substrate being performed under a controlled ambient to prevent oxidation/contamination of the substrate. In some embodiments of the disclosure, the laminate film deposition processes of the current disclosure may be performed in a cluster tool comprising multiple reaction chambers, wherein each individual reaction chamber may be configured for depositing a different metal oxide film on the substrate at a different deposition temperature.

In some embodiments, the plasma-enhanced cyclical deposition processes of the current disclosure may be performed in a single stand-alone reactor which may be equipped with a load-lock. In that case, it is not necessary to cool down the reaction chamber between each run.

Once the substrate has been disposed within a suitable reaction chamber, the exemplary plasma-enhanced cyclical deposition process 200 (FIG. 2) may proceed with a cyclical deposition phase 205 which may comprise, performing one or more deposition super-cycles which may include a first sub-cycle (the process block 220) for depositing a first metal oxide film, and a second sub-cycle (the process block 230) for depositing a second metal oxide film. As illustrated in the exemplary process 200 (FIG. 2) the cyclical deposition phase 205 is initiated by performing the first sub-cycle (the process block 220) to deposit a first metal oxide film to a desired average film thickness, and subsequently the cyclical deposition phase 205 continues by means of the second sub-cycle (the process block 230) to deposit a second metal oxide film to a desired average film thickness. However, it should be appreciated that a unit deposition super-cycle of the present disclosure may alternatively be initiated by performing the second sub-cycle (process block 230) and subsequently the first sub-cycle (process block 220). In addition, the deposition super-cycle of the cyclical deposition phase 205 may further comprise one or more addition sub-cycles and/or additional process steps (not illustrated), such as, cleaning, surface preparation, post-deposition treatments, etc.

Therefore, the cyclical deposition phase 205 of exemplary plasma-enhanced cyclical deposition process 200 may proceed by means of a process block 220 comprising, depositing a first metal oxide film by performing one or more first unit deposition cycles of a first sub-cycle. In particular embodiments, the first sub-cycle of the process block 220 may comprise, depositing a first metal oxide film by contacting the substrate with sequential and alternating pulses of a metal precursor and an oxygen reactive species.

In more detail, FIG. 3 illustrates the first sub-cycle 220 and the constituent sub-processes of the first sub-cycle. In more detail, the first sub-cycle 220 may commence by means of a sub-process block 300 comprising, heating the substrate to a desired deposition temperature.

In some embodiments of the disclosure, the substrate may be heated to a deposition temperature (i.e., substrate temperature) of less than 400° C., or less than 350° C., or less than 300° C., or less than 250° C., or less than 200° C., or less than 150° C., or even less than 100° C. In some embodiments, the substrate may be heated to a deposition temperature greater than 100° C., or greater than 200° C., or greater than 300° C., or greater than 400° C., or greater than 500° C., or even greater than 600° C. In some embodiments, the substrate may be heated to a deposition temperature between 100° C. and 400° C., or between 150° C. and 250° C., or even between 175° C. and 225° C.

The cyclical plasma-enhanced deposition methods of the present disclosure may be performed in a showerhead type reaction chamber, wherein gas is introduced into the reaction chamber via a showerhead gas distribution assembly which may additionally be connected to an RF generator for the application of RF power to a reactant gas. In such embodiments, the temperature of the showerhead may be regulated to a desired temperature. For example, in some embodiments, the temperature of the showerhead may be regulated to a temperature of less than 200° C., or less than 175° C., or less than 150° C., or less than 125° C., or even than 100° C. In some embodiments, the showerhead temperature may be regulated between 100° C. and 200° C., or between 120° C. and 170° C., or even between 140° C. and 160° C.

In addition, to achieving a desired deposition temperature, the exemplary first sub-cycle 220 employed for the deposition of a first metal oxide film (FIG. 3) may also regulate the pressure within the reaction chamber. For example, in some embodiments of the disclosure, the reaction chamber pressure may regulated to less than 800 Pascals, or less than 700 Pascals, or less than 600 Pascals, or less than 400 Pascals, or less than 300 Pascals, or less than 200 Pascals, or even less than 150 Pascals. In some embodiments, the reaction chamber pressure may be regulated at a pressure between 150 Pascals and 800 Pascals, or between 300 Pascals and 600 Pascals, or between 400 Pascals and 600 Pascals, or even between 450 Pascals and 550 Pascals.

The exemplary first sub-cycle 220 (FIG. 3) may continue by means a cyclical deposition phase 305 which may commence with a sub-process block 310 comprising, contacting the substrate with a metal precursor and in particular embodiments, contacting the substrate with a zirconium precursor.

In more detail, the first sub-cycle 220 may be employed to deposit a first metal oxide film by contacting the substrate with sequential and alternating pulses of a first metal precursor and a first oxygen reactive species. In some embodiments, the first metal precursor may comprise a first amino-based metal precursor, such as, a metal amino complex, for example. In some embodiments, the amino-based metal precursor may comprise at least one selected from the group of:

wherein R is independently selected from H, C_(x)H_(y), C_(x)H_(y)O_(z), CS, or CO (wherein x, y, and z are each an integer), X is independently selected from H, C_(x)H_(y), or C_(x)H_(y)O_(z) (wherein x, y, and z are each an integer), and Me is a metal.

In some embodiments of the disclosure, the first amino-based metal precursor may comprise an amino-based zirconium precursor, such as, for example, tetrakis(dimethyl-amino)-zirconium, or tris(dimethyl-amino)-cyclopentadienyl-zirconium.

In some embodiments, the amino-based metal precursor may be supplied to the reaction chamber employing a carrier gas, such as, for example, helium (He), argon (Ar), neon (Ne), krypton (Kr), or xenon (Xe). In particular embodiments, the carrier may comprise argon (Ar), and/or helium (He). In some embodiments, the carrier gas may be stored in a first source vessel in fluid communication with the reaction chamber, and the carrier gas may be feed into a second source vessel arranged and configured for storing the first amino-based metal precursor. The carrier gas may be feed into the second source vessel and either makes contact with an exposed surface of the first amino-based metal precursor or the carrier gas is bubbled through the first amino-based metal precursor, to produce a vapor phase reactant comprising the precursor gas and the carrier gas which is supplied to the reaction chamber.

In some embodiments, the carrier gas may be purified prior to contact with the first amino-based metal precursor. For example, in some embodiments, the carrier gas be purified to an impurity concentration of less 10 parts per billion (ppb), or less than 5 parts per billion (ppb), or even less than 1 part per billion (ppb), thereby producing a purified carrier gas. For example, the purification process may be employed to reduce the concentration of H₂O, O₂, CO₂, and or CO, within the carrier gas.

Therefore, the embodiments of the disclosure may further comprise, providing a first source vessel in fluid communication with the reaction chamber, the first source vessel arranged and configured for storing a carrier gas, and purifying the carrier gas to an impurity concentration of less than 10 parts per billion (ppb) thereby producing a purified carried gas. The methods may further comprise: introducing the purified carrier gas into a second source vessel arranged and configured for storing an amino-based metal precursor, and introducing the purified carrier gas and the amino-based metal precursor into the reaction chamber.

In some embodiments of the disclosure, the sub-process block 310 (FIG. 3) comprising, contacting the substrate with a first metal precursor (e.g., an amino-based zirconium precursor) may comprise, providing a pulse of a zirconium precursor into the reaction chamber for a time period from about 0.05 second to about 5.0 seconds, or from about 0.1 seconds to about 3 seconds, or even from about 0.2 seconds to about 1.0 seconds. As used herein, the term “pulse” may be understood to comprise feeding a precursor into the reaction chamber for predetermined amount of time, and the term “pulse” does not restrict the length or duration of the pulse and a pulse may be of any length of time.

In addition, during the contacting of the substrate with the first metal precursor (e.g., a zirconium precursor), the flow rate of the first metal precursor may be less than 3000 sccm, or less than 2000 sccm, or less than 1000 sccm, or less than 500 sccm, or even between 500 sccm and 300 sccm.

After sufficient time for the first metal precursor to adsorb on the substrate surface (e.g., to a monolayer thickness of less), excess first metal precursor (e.g., zirconium precursor) may be removed from the reaction chamber. In some embodiments, the excess first metal precursor may be purged by stopping the flow of the first metal precursor while continuing to flow the carrier gas, and/or by the addition of a purge gas, for a sufficient time to diffuse or purge excess precursor and reactant by-products, if any, from the reaction chamber. In some embodiments, the excess first metal precursor may be purged with the aid of an inert gas, such as nitrogen, helium, or argon that may be flowing throughout the cyclical deposition phase 305 of the first sub-cycle 220.

In some embodiments, the first metal precursor (e.g., the zirconium precursor) may be purged from the reaction chamber for a time period between 0.1 seconds to 60 seconds, or between 0.3 seconds to 30 seconds, or even between 0.3 seconds to 10 second. Provision and removal of the first metal precursor, i.e., the zirconium precursor, may be considered as the “first phase”, or the “metal phase” and in particular embodiments the “zirconium phase” of the exemplary first sub-cycle 220 (FIG. 3).

Upon completion of the purging of the reaction chamber of excess first metal precursor and any reaction by-products, the cyclical deposition stage 305 of the first sub-cycle 220 may continue with a second phase by means of a sub-process block 320 comprising, contacting the substrate with an oxygen reactive species generated from a plasma produced from a reactant gas comprising at least nitrous oxide (N₂O). The oxygen reactive species generated by the sub-processes of the first sub-cycle 220 (FIG. 3) may be referred to as the “first oxygen reactive species”.

In some embodiments, the reactant gas may comprise one or more additional components. For example, the reactant gas may further comprise a noble gas, such as, for example, molecular nitrogen (N₂). In addition, the reactant gas may further comprise a carrier gas (e.g., argon or helium). For example, the carrier gas flow may be continuous and uninterrupted during the cyclical deposition phase 305 of the first sub-cycle 220, i.e., the flow of the carrier gas is maintained from the sub-process block 310 through to and including the sub-process block 320.

In some embodiments of the disclosure, a flow rate ratio may defined as a ratio of a flow rate of a first gas into the reaction chamber compared with the total flow rate of gases into the reaction chamber. In some embodiments, the flow rate ratio of the nitrous oxide (N₂O) into the reaction chamber may be less than 25% (1:4), or less than 20% (1:4), or less than 15% (1:7), or even less than 10% (1:10). For example, in some embodiments, the sub-process block 320 may comprise flowing a number of gases into the reaction chamber, such as, for example, nitrous oxide (N₂O), molecular nitrogen (N₂), and a carrier gas (e.g., argon), and in such embodiments, the flow rate ratio of the nitrous oxide (N₂O) compared with the total flow of all gases into the reaction chamber maybe less than 20%.

In some embodiments, the sub-process block 320 comprises creating oxygen reactive species and contacting the substrate with said oxygen reactive species. As a non-limiting example, the previous sub-process block 310 may contact the substrate with an amino-based zirconium precursor which chemisorbs on the surface of the substrate and subsequently oxygen reactive species generated during the sub-process block 320 may react with the chemisorbed zirconium precursor to form a zirconium oxide (e.g., ZrO₂) film.

In more detail, the oxygen reactive species may be generated from a plasma produced from a reactant gas comprising at least nitrous oxide (N₂O). As previously described herein, the plasma may be generated remotely (i.e., a remote plasma deposition process), in which case, the oxygen reactive species may be generated remotely from the substrate, or even remotely from the reaction chamber, and subsequently fed into the reaction chamber to enable contact with the substrate. In alternative embodiments, the plasma may be generated within the reaction chamber employing a direct plasma process, as previously described herein.

In some embodiments of the current disclosure, both remote plasma-enhanced cyclical deposition processes and direct plasma-enhanced cyclical deposition processes may excite the reactant gas into a plasma state by the application of RF power to the reactant gas. In some embodiments, the oxygen reactive species may be generated by application of a RF power of less than 400 Watts, or less than 350 Watts, or less than 300 Watts, or less than 250 Watts, or less than 200 Watts, or less than 150 Watts, or even less than 100 Watts. In some embodiments, the oxygen reactive species may be generated by application of a RF power greater than 150 Watts, or greater than 200 Watts, or greater than 250 Watts, or even greater than 300 Watts. In some embodiments, the oxygen reactive species may be generated by application of a RF power between 100 Watts and 400 Watts, or between 200 Watts and 300 Watts, or even between 200 Watts and 250 Watts.

In some embodiments of the disclosure, the first sub-cycle 220 (FIG. 3) and particularly the sub-process block 320 may generate first oxygen reactive species from a plasma by the application of a first RF power to the reactant gas of less than 300 Watts, or less than 250 Watts, or less than 200 Watts. In some embodiments, the first oxygen reactive species may be generated by the application of a first RF power to the reactant gas of between 200 Watts and 300 Watts, or between 250 Watts and 300 Watts, or even between 270 Watts and 300 Watts.

In some embodiments of the disclosure, the first oxygen reactive species generated from the plasma may contact the substrate for a time period between 0.1 seconds and 10 seconds, or between 0.5 seconds and 5.0 seconds, or even between 0.5 seconds and 2.0 seconds. In some embodiments, the first oxygen reactive species generated from the plasma may contact the substrate for a time period of less than 5 seconds, or less than 4 seconds, or less than 3 seconds, or even between 3 seconds and 5 seconds.

After a time period sufficient to react the previously absorbed metal precursor (e.g, zirconium precursor) with the first oxygen reactive species, any excess reactant and reaction byproducts may be removed from the reaction chamber. For example, this step may comprise stopping generation of reactive species and continuing to flow an inert gas. The inert gas flow may flow for a time period sufficient for excess reactive species and volatile reaction byproducts to diffuse out of and be purged from the reaction chamber. For example, the purge process may be utilized for a time period between about 0.1 seconds to about 10 seconds, or about 0.1 seconds to about 4.0 seconds, or even about 0.1 seconds to about 0.5 seconds. Together, the generation and provision of the first oxygen reactive species and removal of excess reactive species (and any reaction by-product) represents a “second phase” or the “the plasma phase” of the exemplary first sub-cycle 220 of FIG. 3.

The sub-processes of the exemplary first sub-cycle 220 comprising contacting the substrate with sequential and alternating pulses of a first metal precursor (e.g., an amino-based zirconium precursor) and a first oxygen reactive species generated from a plasma may constitute a first unit deposition cycle of first sub-cycle 220. For example, a first unit deposition cycle of the first sub-cycle 220 may comprise: contacting the substrate with the first metal precursor (e.g., a zirconium precursor), purging the reaction chamber, contacting the substrate with the first oxygen reactive species, and again purging the reaction chamber.

In some embodiments of the disclosure, the exemplary cyclical plasma-enhanced deposition process of the first sub-cycle 220 (FIG. 3) may comprise repeating the unit deposition cycle one or more times. For example, the cyclical deposition stage 305 of the exemplary first sub-cycle 220 may continue with a decision gate 330, wherein the continuing process selection of decision gate 330 may be determined based on the desired average film thickness of the first metal oxide film deposited (e.g., the preferred thickness of a deposited zirconium oxide film). In some embodiments, the first metal oxide film may deposited at an insufficient thickness for a desired application or laminate film structure and in such embodiments the cyclical deposition phase 305 may be repeated by returning to the sub-process block 310 and the process of contacting the substrate with the first metal precursor (e.g., the zirconium precursor) and contacting the substrate with the first oxygen reactive species may be repeated a number of times. Once the first metal oxide film (e.g., the zirconium oxide film) has been deposited to the desired average film thickness, the exemplary first sub-cycle 220 may exit by means of a sub-process block 340 thereby concluding an initial execution of the first sub-cycle 220 and the substrate with the first metal oxide film thereon may be subjected to the subsequent processes of the exemplary cyclical plasma-enhanced deposition process 200 (FIG. 2) for completing the deposition of a laminate film.

While the first sub-cycle 220 is illustrated in FIG. 3 as commencing with the metal phase, i.e., contacting the substrate with first metal precursor, it is contemplated that in other embodiments the first sub-cycle 220 may commence by contacting the substrate with the first oxygen reactive species and subsequently continues by contacting the substrate with first metal precursor (e.g., an amino-based zirconium precursor). In such embodiments, while no metal precursor may be initially absorbed on the substrate surface, in subsequent following repetitions of the first unit deposition cycle, the oxygen reactive species will follow the chemisorption of the first metal precursor on the substrate surface.

In addition, in some embodiments, the sub-process 310 and the sub-process 320 may be repeated one or more times prior to proceeding to a subsequent sub-process. Therefore, it should be appreciated the first sub-cycle 220 (FIG. 3) may comprise all conceivable sequences of the contacting sub-processes, purge cycles, and repetitions thereof, and such sequences are assumed as part of the present disclosure.

In some embodiments of the disclosure, the first metal oxide film may comprise a zirconium oxide film and in particular embodiments the zirconium oxide film may comprise a zirconium dioxide film (ZrO₂). In some embodiments, the first metal oxide film may comprise a zirconium oxide film with an atomic percentage (atom-%) of zirconium between 30 atomic-% and 40 atomic-% and an atomic percentage (atomic-%) of oxygen between 60 atomic-% and 70 atomic-%. In some embodiments, the first metal oxide film may comprise a zirconium oxide film with an atomic percentage of impurities less than 2 atomic-%, or less than 1 atomic-%, or even between 1 atomic-% and 2 atomic-%. For example, impurities within a zirconium oxide film deposited according to the embodiments of the present disclosure may include, but are not limited to, hydrogen and nitrogen.

In some embodiments of the disclosure, the first metal oxide film may be deposited to an average film thickness of less than 100 nanometers, or less than 50 nanometers, or less than 25 nanometers, or less than 15 nanometers, or less than 10 nanometers, or even less than 5 nanometers. For example, the first metal oxide film may comprise a zirconium oxide film deposited to an average film thickness of between 10 nanometers and 100 nanometers.

Once a first metal oxide film (e.g., a zirconium oxide film) has been deposited to a desired average film thickness, the exemplary cyclical plasma-enhanced deposition process 200 (FIG. 2) may proceed by purging the reaction chamber. For example, an inert gas may be introduced into the reaction chamber for a time period sufficient for any excess reactants (and any reaction by-products) remaining from the execution of the first sub-cycle 220 to diffuse out of and be purged from the reaction chamber. For example, the purge process may be utilized for a time period between about 0.1 seconds to about 10 seconds, or about 0.1 seconds to about 4.0 seconds, or even about 0.1 seconds to about 0.5 seconds.

After purging the reaction chamber the cyclical deposition phase 205 of exemplary plasma-enhanced cyclical deposition process 200 (FIG. 2) may proceed by means of a process block 230 comprising, depositing a second metal oxide film by performing one or more second unit deposition cycles of a second sub-cycle. In particular embodiments, the second sub-cycle of the process block 230 may comprise depositing a titanium oxide film by contacting the substrate with sequential and alternating pulses of a second metal precursor and a second oxygen reactive species.

In more detail, FIG. 4 illustrates the second sub-cycle 230 and the constituent sub-process of the second sub-cycle. It should be noted that the constituent sub-process of the second sub-cycle 230 may be the same, substantially the same, or even similar, to the sub-processes comprising the first sub-cycle 220. Therefore, in interest of brevity the second sub-cycle is described herein in a concise form with only the specific sub-process variations between the first sub-cycle and the second sub-cycle being described in detail.

In more detail, the second sub-cycle 230 (FIG. 4) may commence by means of a sub-process block 400 comprising, heating the substrate to a desired deposition temperature. In some embodiments, the deposition temperature employed for depositing the second metal oxide film may be the same, or substantially the same, as the deposition temperature employed for the deposition of the first metal oxide film. For example, the deposition temperature employed for the deposition temperature of the second oxide film may comprise the same deposition temperatures and temperature ranges as described with reference to the sub-process block 300 of the first sub-cycle 220 (FIG. 3). In alternative embodiments, the deposition temperature employed for the deposition of the second metal oxide film may be different from the deposition temperature employed for the deposition of the first metal oxide film.

In some embodiments, the second sub-cycle 230 (FIG. 4) may be performed in a showerhead type reaction chamber and the temperature of the showerhead may be regulated to temperatures and temperature ranges as previously described with reference to the first sub-cycle 220.

In addition to achieving a desired deposition temperature, the exemplary second sub-cycle 230 employed for the deposition of a second metal oxide film may also regulate the pressure within the reaction chamber at the same pressure values and pressure ranges as previously described with reference to the first sub-cycle 220.

The exemplary second sub-cycle 230 may continue by means of a cyclical deposition phase 405 which may commence with a sub-process block 410 comprising, contacting the substrate with a second metal precursor and in particular embodiments, contacting the substrate with a titanium precursor.

In more detail, the second sub-cycle 230 may be employed to deposit a second metal oxide film by contacting the substrate with sequential and alternating pulses of a second metal precursor and an oxygen reactive species. In some embodiments, the second metal precursor may comprise a second amino-based metal precursor, such as, a metal amino complex, for example. In some embodiments, the second amino-based metal precursor may comprise at least the chemical compound structures (i)-(iv) as previously described with reference to the first sub-cycle 220.

In some embodiments of the disclosure, the second amino-based metal precursor may comprise an amino-based titanium precursor, such as, for example, tetrakis(dimethyl-amino)-titanium (TDMAT), or tetrakis(diethyl-amino)-titanium (TDEAT).

In some embodiments of the disclosure, the second amino-based metal precursor (e.g., the titanium precursor) may be supplied to the reaction chamber utilizing a carrier gas, as previously described herein with reference to the first sub-cycle 220. In some embodiments, the carrier gas may be purified prior to contacting the second amino-based metal precursor. For example, in some embodiments, the carrier may be purified to an impurity concentration of less 10 parts per billion (ppb), or less than 5 parts per billion (ppb), or even less than 1 part per billion (ppb), thereby producing a purified carrier gas. The methods of the second sub-cycle 230 may further comprise: introducing the purified carrier gas into a third source vessel arranged and configured for storing the second amino-based metal precursor, and introducing the purified carrier gas and the second amino-based metal precursor into the reaction chamber.

In some embodiments of the disclosure, the sub-process block 410 (FIG. 4) comprises, contacting the substrate with a second metal precursor (e.g., an amino-based titanium precursor), providing a pulse of the second metal precursor into the reaction chamber for a time period from about 0.05 second to about 5.0 seconds, or from about 0.1 seconds to about 3 seconds, or even from about 0.2 seconds to about 1.0 seconds. In some embodiments, the pulse time period for the second metal precursor (e.g., an amino-based titanium precursor) may be less than the pulse time period for the first metal precursor (e.g., an amino-based zirconium precursor).

In addition, during the contacting of the substrate with the second metal precursor, the flow rate of the second metal precursor may be less than 3000 sccm, or less than 2000 sccm, or less than 1000 sccm, or less than 500 sccm, or even between 500 sccm and 3000 sccm.

After sufficient time for the second metal precursor to adsorb on the substrate surface (e.g., to a monolayer thickness of less), excess second metal precursor (e.g., titanium precursor) may be removed from the reaction chamber. In some embodiments, the excess second metal precursor may be purged by stopping the flow of the second metal precursor while continuing to flow the carrier gas, and/or by the addition of a purge gas, for a sufficient time to diffuse or purge excess precursor and reactant by-products, if any, from the reaction chamber. In some embodiments, the excess second metal precursor may be purged with the aid of an inert gases, such as nitrogen, helium, or argon that may be flowing throughout the cyclical deposition phase 405 of the second sub-cycle 230 (FIG. 4).

In some embodiments, the second metal precursor may be purged from the reaction chamber for a time period between 0.1 seconds to 60 seconds, or between 0.3 seconds to 30 seconds, or even between 0.3 seconds to 10 second. Provision and removal of the second metal precursor, i.e., the titanium precursor, may be considered as the “first phase”, the “metal phase”, or in particular embodiments the “titanium phase” of the second sub-cycle 230 (FIG. 4).

Upon completion of the purging of the reaction chamber of excess second metal precursor and any reaction by-products, the cyclical deposition stage 405 of the second sub-cycle 230 may continue with a second phase (“the plasma phase”) by means of a sub-process block 420 comprising, contacting the substrate with an oxygen reactive species generated from a plasma produced from a reactant gas comprising at least nitrous oxide (N₂O). The oxygen reactive species generated by the sub-processes of the second sub-cycle 230 (FIG. 4) may be referred to as the “second oxygen reactive species”.

In some embodiments, the reactant gas employed for deposition of the second metal oxide film may comprise the same components as the reactant gas employed for the deposition of the first metal oxide film, as previously described herein. For example, the reactant gas employed during the second sub-cycle 230 and particular employed for generation of the second oxygen reactive species may comprise at least nitrous oxide (N₂O), and in particular embodiments may also comprise an additional noble (e.g., molecular nitrogen) and/or a carrier gas (e.g., argon or helium), as previously described with reference to the first sub-cycle 220. In addition, the flow rate ratio of the nitrous oxide (N₂O) during the second sub-cycle 230 may be the same as that previously described with reference to the first sub-cycle 220. For example, flow rate ratio of the nitrous oxide (N₂O) into the reaction chamber during the sub-process block 420 (FIG. 4) may be less than 25% (1:4), or less than 20% (1:4), or less than 15% (1:7), or even less than 10% (1:10). In some embodiments, the flow rate of the nitrous oxide may be less than 20% of the total gas flow rate into the reaction chamber.

In some embodiments, the sub-process block 420 (FIG. 4) may comprise, generating second oxygen reactive species and contacting the substrate with said second oxygen reactive species. As a non-limiting example, the previous sub-process block 410 may contact the substrate with an amino-based titanium precursor which chemisorbs on the surface of the substrate and subsequently the second oxygen reactive species generated during the sub-process block 420 may react with the chemisorbed titanium precursor to form a titanium oxide (e.g., TiO₂) film.

In more detail, the second oxygen reactive species may be generated from a plasma produced from the reactant gas comprising at least nitrous oxide (N₂O), as previously described with reference to the first sub-cycle 220. As previously described herein, the plasma may be generated remotely or within the reaction chamber employing a direct plasma process. Therefore, in some embodiments, the second oxygen reactive species may be the same of the first oxygen reactive species.

In some embodiments of the disclosure, the second sub-cycle 230 (FIG. 4) and particularly the sub-process block 420 may generate second oxygen reactive species from a plasma by the application of a second RF power to the reactant gas of less than 250 Watts, or less than 200 Watts, or less than 150 Watts. In some embodiments, the second oxygen reactive species may be generated by the application of a second RF power to the reactant gas of between 150 Watts and 250 Watts, or between 175 Watts and 230 Watts, or even between 200 Watts and 220 Watts. In some embodiments of the disclosure, the first RF power employed to generate the first oxygen reactive species of the first sub-cycle 220 may be less than the second RF power employed to generate the second oxygen reactive species of the second sub-cycle 230.

In some embodiments of the disclosure, the second oxygen reactive species generated from the plasma may contact the substrate for a time period between 0.1 seconds and 2 seconds, or between 0.2 seconds and 1.0 seconds, or even between 0.3 seconds and 0.5 seconds. In some embodiments, the second oxygen reactive species generated from the plasma may contact the substrate for a time period of less than 1 second, or less than 0.5 seconds, or less than 0.3 seconds, or even less 0.2 seconds.

After a time period sufficient to react the previously absorbed metal precursor (e.g., an amino-based titanium precursor) with the second oxygen reactive species, any excess reactive species and reaction byproducts may be removed from the reaction chamber, as previously described herein with reference to the first sub-cycle 220. Together, the generation and provision of the second oxygen reactive species and removal of excess reactive species (and any reaction by-product) represents a second phase (“the plasma phase) of the exemplary second sub-cycle 230 of FIG. 4.

The sub-processes of the exemplary second sub-cycle 230 (FIG. 4) comprising contacting the substrate with sequential and alternating pulses of a second metal precursor (e.g., an amino-based titanium precursor) and a second oxygen reactive species generated from a plasma, may constitute a second unit deposition cycle of the second sub-cycle 230. For example, a second unit deposition cycle of the second sub-cycle 230 may comprise: contacting the substrate with the second metal precursor (e.g., a titanium precursor), purging the reaction chamber, contacting the substrate with the second oxygen reactive species, and again purging the reaction chamber.

In some embodiments of the disclosure, the exemplary cyclical plasma-enhanced deposition process of the second sub-cycle 230 may comprise repeating the second unit deposition cycle one or more times. For example, the cyclical deposition stage 405 of the exemplary second sub-cycle 230 may continue with a decision gate 430, wherein the continuing process selection of decision gate 430 may be determined based on the desired average film thickness of the second metal oxide film deposited (e.g., the preferred thickness of a deposited titanium oxide film). In some embodiments, the second metal oxide film may deposited at an insufficient thickness for a desired application or laminate film structure and in such embodiments the cyclical deposition phase 405 may be repeated by returning to the sub-process block 410 and the process of contacting the substrate with the second metal precursor (e.g., the titanium precursor) and contacting the substrate with the second oxygen reactive species may be repeated a number of times. Once the second metal oxide film (e.g., the titanium oxide film) has been deposited to the desired average film thickness, the exemplary second sub-cycle 230 may exit by means of a sub-process block 440 thereby concluding an initial execution of the second sub-cycle 230, and the substrate with the second metal oxide film thereon may be subjected to the subsequent processes of the exemplary cyclical plasma-enhanced deposition process 200 (FIG. 2) for completing the deposition of a laminate film.

While the second sub-cycle 230 is illustrated in FIG. 4 as commencing with the metal phase, i.e., contacting the substrate with second metal precursor, it is contemplated that in other embodiments the second sub-cycle 230 may commence by contacting the substrate with the second oxygen reactive species and subsequently proceed by contacting the substrate with second metal precursor (e.g., an amino-based titanium precursor). In addition, in some embodiments, the sub-process 410 and the sub-process 420 may be repeated one or more times prior to proceeding to a subsequent sub-process. Therefore, it should be appreciated the second sub-cycle 230 may comprise all conceivable sequences of the contacting sub-processes, purge cycles, and repetitions thereof, and such sequences are assumed as part of the present disclosure.

In some embodiments of the disclosure, the second metal oxide film may comprise a titanium oxide film, and in particular embodiments the titanium oxide film may comprise a titanium dioxide film (TiO₂). In some embodiments, the second metal oxide film may comprise a titanium oxide film with an atomic percentage (atom-%) of titanium between 30 atomic-% and 40 atomic-% and an atomic percentage (atomic-%) of oxygen between 60 atomic-% and 70 atomic-%. In some embodiments, the second metal oxide film may comprise a titanium oxide film with an atomic percentage of impurities less than 2 atomic-%, or less than 1 atomic-%, or even between 1 atomic-% and 2 atomic-%. For example, impurities within a titanium oxide film deposited according to the embodiments of the present disclosure may include, but are not limited to, hydrogen and nitrogen.

In some embodiments of the disclosure, the second metal oxide film may be deposited to an average film thickness of less than 100 nanometers, or less than 50 nanometers, or less than 25 nanometers, or less than 15 nanometers, or less than 10 nanometers, or even less than 5 nanometers. For example, the second metal oxide film may comprise a titanium oxide film deposited to an average film thickness of between 10 nanometers and 100 nanometers.

Once a second metal oxide film (e.g., a titanium oxide film) has been deposited to a desired average film thickness, the exemplary cyclical plasma-enhanced deposition process 200 (FIG. 2) may proceed by purging the reaction chamber. For example, an inert gas may be introduced into the reaction chamber for a time period sufficient for any excess reactants (and any reaction by-products) remaining from the execution of the second sub-cycle 230 to diffuse out of and be purged from the reaction chamber. For example, the purge process may be utilized for a time period between about 0.1 seconds to about 10 seconds, or about 0.1 seconds to about 4.0 seconds, or even about 0.1 seconds to about 0.5 seconds.

After purging the reaction chamber, the cyclical deposition phase 205 of exemplary plasma-enhanced cyclical deposition process 200 (FIG. 2) may proceed by means of a decision gate 240 wherein the continuing process selection of decision gate 240 may be determined based on the desired average total film thickness of the laminate film deposited (e.g., the preferred thickness of the metal oxide laminate film comprising first metal oxide film(s) and second metal oxide film(s)). In some embodiments, the laminate film may be deposited at an insufficient total average film thickness for a desired application and, in such embodiments, the cyclical deposition phase 205 may be repeated by returning to the process block 220 and the process of depositing a first metal oxide film (e.g., a zirconium oxide film) and depositing a second metal oxide film (e.g., a titanium oxide film) may be repeated a number of times, thereby building up a laminate film comprising alternating first metal oxide films and second metal oxide films.

The processes of the exemplary cyclical plasma-enhanced deposition process 200, comprising depositing a first metal oxide film (the process block 220) and depositing a second metal oxide film (the process block 230), may constitute a unit deposition super-cycle. For example, a unit deposition super-cycle of the exemplary deposition process 200 may comprise: depositing a first metal oxide film (e.g., a zirconium oxide film) by performing a number first unit deposition cycles of a first sub-cycle (the process block 220), purging the reaction chamber, depositing a second metal oxide film (e.g., a titanium oxide film) by performing a number of second unit deposition cycles of a second sub-cycle (the process block 230), and again purging the reaction chamber.

Once the laminate film has been deposited to the desired average total film thickness, the exemplary cyclical plasma-enhanced deposition process 200 may exit by means of a process block 250 thereby concluding the deposition of the laminate film and the substrate with the metal oxide laminate film thereon may be subjected to further processes for forming a desired semiconductor structure.

In some embodiments of the disclosure, the laminate film may be deposited to a total average film thickness of less than 100 nanometers, or less than 50 nanometers, or less than 25 nanometers, or less than 15 nanometers, or less than 10 nanometers, or even less than 5 nanometers. For example, the laminate film may comprise a ZrO₂/TiO₂ metal oxide laminate film deposited to an average film thickness of between 10 nanometers and 200 nanometers.

As a non-limiting example, FIG. 5 illustrates exemplary process sequences of a unit deposition super-cycle for depositing a laminate film of the present disclosure wherein the horizontal axis represents the time parameter (but does not necessarily represent the actual duration of individual processes) and the vertical axis represents an ON-state or OFF-state for a process parameter (but does not necessarily represent the value of the associated parameter).

In more detail, the process sequences of the exemplary unit deposition super-cycle 500 of FIG. 5 may comprise, depositing a first metal oxide film by performing x cycles of the first sub-cycle 220 (e.g., for deposition of a zirconium oxide film), purging the reaction chamber (time period 502), depositing a second metal oxide film by performing y cycles of the second sub-cycle 230 (e.g., for depositing a titanium oxide film), and again purging the reaction chamber (time period 504).

In more detail, the first sub-cycle 220 may proceed by introducing the reactant gas into the reaction chamber at a time period t=0. For example, the reactant gas may comprise nitrous oxide (N₂O), molecular nitrogen (N₂), as well as argon carrier gas. Subsequently, the first metal precursor (e.g., the zirconium precursor) may be pulsed into the reaction chamber (time period 506) to make contact with a substrate disposed within the reaction chamber. Following the pulse of the first metal precursor, the first sub-cycle 220 may continue by purging the reaction chamber (time period 508). For example, the purge of the reaction chamber of excess first metal precursor may be aided by the continuing flow of the reactant gas. Following the purge of the reaction, an RF pulse of a first RF power may be applied to the reactant gas (time period 510) to generate the first oxygen reactive species for reaction with the previously chemisorbed first metal precursor. Following the application of the RF pulse and generation of the first oxygen reactive species, the reaction chamber is again purged of excess reactive species and any by-products (time period 512). The sequences denoted by time periods 506, 508, 510, and 512 comprise a first unit deposition cycle of the first sub-cycle 220 and this first unit deposition cycle may then be repeated x times (i.e., for x cycles) to deposit a first metal oxide film (e.g., a zirconium oxide film) to a desired average film thickness.

Upon completion of the deposition of the first metal oxide film (e.g., the zirconium oxide film) the flow of the reactant gas may be discontinued (time period 502) and an inert purge gas may be introduced into the reaction chamber.

Following the purge of the reaction chamber (time period 502), the process sequence of the exemplary unit deposition super-cycle 500 of FIG. 5 may continue by performing y cycles of the second sub-cycle 230 for depositing a second metal oxide (e.g., a titanium oxide film).

In more detail, the process sequences of the second sub-cycle 230 may comprise, reintroducing the reactant gas into the reaction chamber at a time period t=0+. For example, the reactant gas may comprise nitrous oxide (N₂O), molecular nitrogen (N₂), as well as argon carrier gas. Subsequently, the second metal precursor (e.g., the titanium precursor) may be pulsed into the reaction chamber (time period 514) to make contact with a substrate disposed within the reaction chamber. Following the pulse of the second metal precursor, the second sub-cycle 230 may continue by purging the reaction chamber (time period 516). For example, the purge of the reaction chamber of excess second metal precursor may be aided by the continuing flow of the reactant gas. Following the purge of the reaction chamber, an RF pulse of a second RF power may be applied to the reactant gas (time period 518) to generate the second oxygen reactive species for reaction with the previously chemisorbed second metal precursor. Following the application of the RF pulse and generation of the second oxygen reactive species, the reaction chamber is again purged of excess reactive species and any by-products (time period 520). The process sequences denoted by time periods 514, 516, 518, and 520 comprise a second unit deposition cycle of the second sub-cycle 230 and this second unit deposition cycle may then be repeated y times (i.e., for y cycles) to deposit a second metal oxide film (e.g., a titanium oxide film) to a desired average film thickness.

In some embodiments of the disclosure, the ratio of the number (#) of repetitions of the first sub-cycle (x cycles) to the number (#) of repetitions of the second sub-cycle (y cycles) within a unit deposition super-cycle may be varied to deposit a metal oxide laminate film with preferred properties. The ratio of the number of first sub-cycles (x cycles) to the number second sub-cycle (y cycles) within a unit deposition super-cycle may be referred to as the “lamination ratio” which may be calculated by the formula:

$\frac{\left( {{\#\mspace{14mu}{cycles}\mspace{14mu}{of}\mspace{14mu}{first}\mspace{14mu}{sub}} - {cycle}} \right)\mspace{14mu} x\mspace{14mu}{GPC}\mspace{14mu}{\# 1}\mspace{14mu}\left( {{nm}/{cyc}} \right)}{{\left( {{\#\mspace{14mu}{cycles}\mspace{14mu}{of}\mspace{14mu}{first}\mspace{14mu}{sub}} - {{cycle}\mspace{14mu} x\mspace{14mu}{GPC}\; 1\left( {{nm}/{cyc}} \right)} + {\#{cycles}\mspace{14mu}{of}\mspace{14mu}{second}\mspace{14mu}{sub}} - {cycle}} \right)\mspace{14mu} x\mspace{14mu}{GPC}\; 2\mspace{14mu}\left( {{nm}/{cyc}} \right)}\mspace{14mu}}$

wherein, GPC #1 equals the growth per sub-cycle (nanometers per sub-cycle) for the first sub-cycle, and GPC #2 equals the growth rate per sub-cycle (nanometers per sub-cycle) for the second sub-cycle. For example, in some embodiments of the disclosure, a unit deposition super-cycle may be utilized to deposit a metal oxide laminate film with a lamination ratio between 0.1 to 0.9.

The exemplary unit deposition super-cycle 500 (FIG. 5) may include additional processes, such as, for example, cleaning, surface preparation, and post-deposition processes (not illustrated). In addition, it should be noted that the embodiments of the disclosure also comprise deposition super-cycles comprising the processes illustrated in FIG. 5 but performed in an alternative sequence order. For example, an alternative unit deposition super-cycle may comprise: depositing the second metal oxide film (by performing y cycles of the second sub-cycle), purging the reaction chamber, depositing a first metal oxide film (by performing x cycles of the first sub-cycle), and again purging the reaction chamber.

As further non-limiting examples of the embodiments of the disclosure, FIGS. 6A and 6B illustrate simplified cross-sectional schematic diagrams of semiconductor structures that may be formed by the cyclical plasma-enhanced processes of the present disclosure.

In more detail, FIG. 6A illustrates a semiconductor structure 600 which comprises a substrate 602 and a metal oxide laminate film 604A disposed over the substrate, wherein the metal oxide laminate film 604A is deposited according to the embodiments of the present disclosure. For example, the metal oxide laminate film 604A may comprise a first metal oxide film 606 and a second metal oxide film 608. In some embodiments, the first metal oxide film 606 may comprise a zirconium oxide film (e.g., ZrO₂) and the second metal oxide film 608 may comprise a titanium oxide film (e.g., TiO₂). In some embodiments, the second metal oxide film 608 is disposed directly over the first metal oxide film 606. In some embodiments, the metal oxide laminate film 604A is disposed directly over the substrate 602.

As illustrated in FIG. 6A, the metal oxide laminate film 604A comprises a single first metal oxide film 606, and a single second metal oxide film 608 disposed directly over the first metal oxide film 606. Such a metal oxide laminate, i.e., consisting of the first metal oxide film and the second metal oxide film disposed directly over the first metal oxide film may be deposited by performing a single (i.e., one (1)) deposition super-cycle of the exemplary plasma-enhanced cyclical deposition process 200 of FIG. 2.

FIG. 6B illustrates a semiconductor structure 610 which comprises the previous semiconductor structure 600 of FIG. 6A after performing a further four (4) repetitions of the deposition super-cycle of the exemplary plasma-enhanced cyclical deposition process 200 of FIG. 2, making for a total of five (5) cycles of the deposition super-cycle. As illustrated in FIG. 6B, the semiconductor structure 610 comprises a metal oxide laminate film 612 which comprises five (5) bilayers (604A, 604B, 604C, 604D, and 604E), each of which comprises a first metal oxide film 606 (e.g., a zirconium oxide film) and a second metal oxide film 608 (e.g. a titanium oxide film).

In some embodiments of the disclosure, the laminate films of the present disclosure may be employed for the fabrication of semiconductor device structures. In some embodiments, the laminate films of the present disclosure may be utilized as etch masks, i.e., in semiconductor device fabrication processes involving etching portions of a substrate, wherein the laminate film etch mask provides protection from the etchant to the underlying portion of the substrate. As a non-limiting example, the laminate film may comprise a metal oxide laminate film including alternating films of zirconium oxide and titanium oxide (e.g. a ZrO₂/TiO₂ metal oxide laminate film).

In more detail, FIG. 7 illustrates experimental plasma etch resistance data for a number of zirconium oxide films (ZrO₂) compared with ZrO₂/TiO₂ metal oxide laminate films deposited according to the embodiments the present disclosure. The experimental data illustrated in row (a) was obtained by etching the films at a substrate temperature of 200° C. in a plasma based etch chemistry employing silicon hexafluoride (SF₆). The experimental data illustrated in row (b) was obtained by etching the films at a substrate temperature of 500° C. in a plasma based etch chemistry employing carbon fluoride (CF₄) and the experimental data illustrated in row (c) was obtained by etching the films at a substrate temperature of 500° C. in plasma based etch chemistry employing chlorine (Cl₂).

As demonstrated in FIG. 7, both the ZrO₂ films and the ZrO₂/TiO₂ metal oxide laminate films demonstrate little to no measureable etching at a substrate temperature of 200° C. (data of row (a)). However, at a substrate temperature of 500° C. (data of rows (b) and (c)) the ZrO₂/TiO₂ metal oxide laminate films of the present disclosure are significantly etched compared with the ZrO₂ films, demonstrating that the ZrO₂/TiO₂ metal oxide laminate films may be utilized as etch resistance etch masks which are also removable at upon completion of the desired etch process.

The example embodiments of the disclosure described above do not limit the scope of the invention, since these embodiments are merely examples of the embodiments of the invention, which is defined by the appended claims and their legal equivalents. Any equivalent embodiments are intended to be within the scope of this invention. Indeed, various modifications of the disclosure, in addition to those shown and described herein, such as alternative useful combination of the elements described, may become apparent to those skilled in the art from the description. Such modifications and embodiments are also intended to fall within the scope of the appended claims. 

What is claimed is:
 1. A method for forming a laminate film, the method comprising: providing a substrate into a reaction chamber configured for cyclical plasma-enhanced deposition processes; heating the substrate to a desired deposition temperature; depositing on the substrate a laminate film by alternatingly depositing a zirconium oxide film and a titanium oxide film; wherein depositing the laminate film comprises: contacting the substrate with sequential and alternating pulses of an amino-based metal precursor and an oxygen reactive species generated from a plasma produced from a reactant gas comprising at least nitrous oxide (N₂O).
 2. The method of claim 1, further comprising introducing the reactant gas into the reaction chamber as a continuous pulse during the step of depositing the zirconium oxide film and during the step of depositing the titanium oxide film.
 3. The method of claim 2, further comprising purging the reactant gas from the reaction chamber between the steps of depositing the zirconium oxide film and depositing the titanium oxide film.
 4. The method of claim 2, further comprising flowing an inert gas into the reaction chamber along with the nitrous oxide (N₂O) such that the reactant gas comprises at least nitrous oxide (N₂O), and the inert gas.
 5. The method of claim 1, further comprising: providing a first source vessel in fluid communication with the reaction chamber, the first source vessel arranged and configured for storing a carrier gas; purifying the carrier gas to an impurity concentration of less than 10 parts per billion (ppb) thereby producing a purified carrier gas; introducing the purified carrier gas into a second source vessel arranged and configured for storing the amino-based metal precursor; and introducing the purified carrier gas and the amino-based metal precursor into the reaction chamber.
 6. The method of claim 1, wherein the lamination ratio of the laminate file is between 0.1 and 0.9.
 7. The method of claim 1, wherein the amino-based metal precursor comprises at least one of:


8. A method for forming a laminate film on a substrate disposed within a reaction chamber, the method comprising: performing one or more super-cycles of a cyclical plasma-enhanced deposition process, wherein a unit super-cycle comprises: depositing a zirconium oxide film by contacting the substrate with sequential and alternating pulses of an amino-based zirconium precursor and a first oxygen reactive species; and depositing a titanium oxide film by contacting the substrate with sequential and alternating pulses of an amino-based titanium precursor and a second oxygen reactive species.
 9. The method of claim 8, wherein the first and second oxygen reactive species are generated from a plasma produced from a reactant gas comprising at least nitrous oxide (N₂O).
 10. The method of claim 9, wherein the reactant gas further comprises molecular nitrogen (N₂).
 11. The method of claim 9, wherein the plasma comprising at least one of a direct plasma, and a remote plasma.
 12. The method of claim 11, wherein the first oxygen reactive species is generated from the plasma by application of a number of first RF pulses to the reactant gas at a first RF power, and the second oxygen reactive species is generated from the plasma by application of a number of second RF pulses to the reactant gas at a second RF power, wherein the first RF power is less than the second RF power.
 13. The method of claim 12, wherein the first and second RF pulses are temporally separated from both the pulses of the amino-based zirconium precursor and the pulses of the amino-based titanium precursor.
 14. A method for forming a laminate film comprising: providing a substrate into a reaction chamber; depositing on the substrate a metal oxide laminate film by alternatingly depositing a first metal oxide film and a second metal oxide film different from the first metal oxide film, wherein depositing the first and second metal oxide films comprises: contacting the substrate with sequential and alternating pulses of a metal precursor and an oxygen reactive species generated by applying RF power to a reactant gas comprising at least nitrous oxide (N₂O).
 15. The method of claim 14, wherein the first metal oxide film comprises a zirconium oxide film and the metal precursor comprises an amino-based zirconium precursor.
 16. The method of claim 14, wherein the second metal oxide film comprises a titanium oxide film and the metal precursor comprises an amino-based titanium precursor.
 17. The method of claim 14, wherein the flow rate ratio of the nitrous oxide (N₂O) is less than 20% of the total flow rate of gases into the reaction chamber.
 18. The method of claim 14, further comprising heating the substrate disposed within the reaction chamber to a deposition temperature of less than 250° C.
 19. A semiconductor device structure comprising the laminate film deposited according to the method of claim
 1. 20. A cyclical plasma-enhanced deposition apparatus configured and arranged to perform the method of claim
 1. 